isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD795 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max) @IC= 2.0A APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w VALUE UNIT 50 V 40 V 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 6.0 A Base Current-Continuous 0.6 A Collector Power Dissipation @ Ta=25℃ 1.5 IB B W PC TJ Tstg Collector Power Dissipation @ TC=25℃ 20 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD795 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.7 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 1V 0.9 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 1V hFE-2 DC Current Gain COB Collector Output Capacitance m e s isc fT PARAMETER IC= 2.5A; VCE= 1V w. w w Current-Gain—Bandwidth Product hFE-1 Classifications R Q 60-120 100-200 B P E 160-320 200-400 isc Website：www.iscsemi.cn IE= 0; VCB= 10V; f= 1MHz IC= 0.1A; VCE= 5V 2 60 n c . i 400 30 40 pF 95 MHz