isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD568 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type 2SB707 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 80 60 V V 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3.5 A Total Power Dissipation @ TC=25℃ 40 B PC W Total Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD568 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 3A; VCE= 1V hFE-2 DC Current Gain L 40-80 60-120 n c . i m e s c s i . w 100-200 isc Website：www.iscsemi.cn 2 TYP. MAX 60 B w w K MIN B IC= 5A; VCE= 1V hFE-1 Classifications M CONDITIONS 40 20 UNIT V 200