ISC 2SD898

Inchange Semiconductor
Product Specification
2SD898
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage ,high power dissipation
·Wide area of safe operation
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
1500
V
VEBO
Emitter-base voltage
Open collector
6
V
3
A
3.5
A
50
W
IC
Collector current
ICM
Collector current-peak
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD898
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
6
UNIT
Emitter-base breakdown voltage
IE=200mA; IC=0;
V
VCEsat
Collector-emitter saturation voltage
IC=2.5A;IB=0.8 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A;IB=0.8 A
1.5
V
ICES
Collector cut-off current
VCE=1500V;RBE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=6V;IC=0
50
200
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
10
40
VF
Diode forward voltage
IF=3A
2.2
2
V
Inchange Semiconductor
Product Specification
2SD898
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3