isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY74 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC = 3A APPLICATIONS ·Designed for use in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w UNIT 150 V 120 V 7 V 10 A IC Collector Current-Continuous ICP Collector Current-Peak 15 A IB Base Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX UNIT 1.5 ℃/W Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY74 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0; L= 25mH 120 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.7 V ICBO Collector Cutoff Current VCB= 130V; IE= 0 1.0 mA ICEX Collector Cutoff Current VCE= 130V; VBE(off)= 1.5V VCE= 130V; VBE(off)= 1.5V, TC= 150℃ 1.0 10 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE DC Current Gain fT B s c s i . w n c . i m e w w Current Gain-Bandwidth Product IC= 3A; VCE= 4V 50 IC= 1A; VCE= 10V 0.8 isc Website：www.iscsemi.cn 2 MAX UNIT 150 MHz