JMNIC 2SA1063

Product Specification
www.jmnic.com
2SA1063
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・High transition frequency
APPLICATIONS
・Designed for general purpose switching
and amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-6
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Product Specification
www.jmnic.com
2SA1063
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
-2.0
V
VBE
Base-emitter on voltage
IC=-4A;VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-4A ; VCE=-5V
20
Transition frequency
IC=-0.5A ; VCE=-5V
fT
‹
CONDITIONS
hFE-1 Classifications
R
Q
P
O
40-80
60-120
90-180
140-280
2
MIN
TYP.
MAX
-150
UNIT
V
280
50
MHz
Product Specification
www.jmnic.com
2SA1063
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3