JMNIC 2SA1308

JMnic
Product Specification
2SA1308
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Low collector saturation voltage
APPLICATIONS
・High current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-5
A
ICM
Collector current-peak
-8
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1308
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A;IB=-0.15A
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-3A;IB=-0.15A
-1.2
V
ICBO
Collector cut-off current
VCB=-100V;IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-1
μA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70
hFE-2
DC current gain
IC=-3A ; VCE=-1V
30
fT
Transition frequency
IC=-1A ; VCE=-4V
60
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
200
pF
2
MIN
TYP.
MAX
-100
UNIT
V
240
JMnic
Product Specifications
2SA1308
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3