JMnic Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation ・Complement to type 2SC2774 APPLICATIONS ・Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -17 A IB Base current -5 A PC Collector power dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1170 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ; IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V Collector-emitter saturation voltage IC=-10A ;IB=-1A -2.5 V ICBO Collector cut-off current VCB=-200V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-8A ; VCE=-4V Transition frequency IC=-1A ; VCE=-12V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 20 20 MHz 0.6 μs 0.9 μs 0.2 μs Switching times tr tstg tf Rise time Storage time IC=-10A; IB1=- IB2=-1A RL=4Ω;VCC=-40V Fall time 2 JMnic Product Specification 2SA1170 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3