JMNIC 2SA771

JMnic
Product Specification
2SA770 2SA771
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SC1985/1986
・Low collector saturation voltage
APPLICATIONS
・For general and industrial
purpose applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA770
VCBO
Collector-base voltage
-60
Open base
2SA771
VEBO
Emitter-base voltage
V
-80
2SA770
Collector-emitter voltage
UNIT
-60
Open emitter
2SA771
VCEO
VALUE
V
-80
Open collector
-6
V
IC
Collector current
-6
A
IB
Base current
-3
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA770 2SA771
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA770
V(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage
2SA770
ICBO
Collector
cut-off current
2SA771
MAX
UNIT
-60
V
-80
IC=-3A; IB=-0.3A
-1.0
V
-1.0
mA
-1.0
mA
VCB=-60V; IE=0
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
fT
TYP.
IC=-25mA ,IB=0
2SA771
VCEsat
MIN
40
10
MHz
0.9
μs
1.0
μs
0.1
μs
Switching times
tr
tstg
tf
Rise time
Storage time
IC=-3A ; VCC=-9V
IB1=-IB2=-0.4A;RL=3Ω
Fall time
2
JMnic
Product Specification
2SA770 2SA771
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3