Product Specification www.jmnic.com 2SA748 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1398 ・Large collector power dissipation APPLICATIONS ・For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A PC Collector power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SA748 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Base-emitter breakdown voltage IC=-10mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -70 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.6 -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1 μA ICEO Collector cut-off current VCE=-20V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-0.1A ; VCE=-5V 30 hFE-2 DC current gain IC=-1A ; VCE=-5V 50 Transition frequency IC=0.5A ; VCE=-5V fT hFE-2 Classifications P Q R 50-100 80-160 120-220 JMnic 220 120 MHz Product Specification www.jmnic.com 2SA748 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic