JMNIC 2SA775

JMnic
Product Specification
2SA775
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・High breakdown voltage
APPLICATIONS
・For TV vertical output amplifier
applicatons
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-4
V
-0.7
A
12.5
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA775
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-10μA ,IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA ,IC=0
-4
V
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.0
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
μA
hFE
DC current gain
IC=-50mA ; VCE=-4V
Transition frequency
IC=-50mA ; VCE=-4V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
30
MHz
JMnic
Product Specification
2SA775
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3