JMnic Product Specification 2SB713 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Excellent good linearity of hFE APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -9 A ICP Collector current (Pulse) -15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB713 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE MAX UNIT IC=-7A; IB=-0.7A -2.0 V Base-emitter on voltage IC=-7A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-140V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 hFE-3 DC current gain IC=-7A ; VCE=-5V 15 Transition frequency IC=-0.5A ; VCE=-5V 7 MHz Collector output capacitance f=1MHz;VCB=-10V 220 pF fT COB CONDITIONS hFE-2 Classifications R Q P 40-80 60-120 100-200 2 MIN TYP. 200 JMnic Product Specification 2SB713 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3