JMNIC 2SC1905

JMnic
Product Specification
2SC1905
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High breakdown voltage
・Large collector power dissipation
APPLICATIONS
・Color TV horizontal deflection
driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
350
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current
200
mA
ICM
Collector current-peak
400
mA
PC
Collector power dissipation
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC1905
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=100μA ; IE=0
350
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100μA ; IC=0
7.5
V
Collector-emitter saturation voltage
IC=50mA; IB=5mA
ICBO
Collector cut-off current
IEBO
hFE
VCEsat
CONDITIONS
MIN
TYP.
MAX
UNIT
1.0
V
VCB=200V ;IE=0
2
μA
Emitter cut-off current
VEB=5V; IC=0
2
μA
DC current gain
IC=10m A ; VCE=10V
40
fT
Transition frequency
IC=10m A ; VCE=30V
50
COB
Output capacitance
IE=0 ; VCB=50V; f=1MHz
tstg
Storage time
IC=100mA; IB1=10mA; IB2=0
2
5
250
MHz
4.5
pF
7.5
μs
JMnic
Product Specification
2SC1905
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3