JMNIC BUL56B

Product Specification
www.jmnic.com
BUL52B
Silicon Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage
・Fast switching
・High energy rating
APPLICATIONS
・Designed for use in
electronic ballast applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
emitter
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
18
A
ICM
Collector current-Peak
25
A
IB
Base current
5
A
85
W
-55~150
℃
Ptot
Total power dissipation
Tstg
Operating and storage temperature
TC=25℃
JMnic
Product Specification
www.jmnic.com
BUL56B
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
250
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=1mA ;IC=0
10
V
VCEsat-1
Collector-emitter saturation voltage
IC=1A IB=0.1A
0.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A IB=0.7A
0.6
V
VCEsat-3
Collector-emitter saturation voltage
IC=12A IB=1.2A
1.2
V
VBEsat-1
Emitter-base saturation voltage
IC=7A IB=0.7A
1.2
V
VBEsat-2
Emitter-base saturation voltage
IC=12A IB=1.2A
1.8
V
ICBO
Collector cut-off current
VCB=250V IE=0
TC=125℃
10
100
μA
ICEO
Collector cut-off current
VCE=90V IB=0
100
μA
IEBO
Emitter cut-off current
VEB=9V IC=0
TC=125℃
10
100
μA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
30
90
hFE-2
DC current gain
IC=5A ; VCE=5V
25
60
hFE-3
DC current gain
IC=12A ; VCE=1V
5
fT
Transition frequency
IC=0.2A ; VCE=4V
20
MHz
Cob
Output capacitance
VCB=100V ;f=1MHz
100
pF
JMnic
Product Specification
www.jmnic.com
BUL56B
Silicon Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
JMnic