SEMICONDUCTOR KU2751K TECHNICAL DATA N-Ch Trench MOSFET General Description L1 5 This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. 4 D e 8 1 b E FEATURES A VDSS=30V, ID=52A. C Low Drain to Source On-state Resistance. E1 : RDS(ON)=11mΩ(Max.) @ VGS=10V H : RDS(ON)=15mΩ(Max.) @ VGS=4.5V E2 K 8 DIM A b L C D D1 E 1 E1 E2 e D1 H 5 4 K L MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL RATING Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current Drain Power Dissipation 30 20 DC@TC=25 (Note1) ID 52 Pulsed (Note2) IDP 208 (Note3) EAS 170 Single Pulsed Avalanche Energy @TC=25 (Note1) @Ta=25 (Note2) PD L1 1,2,3 : Source 4 : Gate 5,6,7,8 : Drain UNIT MILLIMETERS _ 0.10 1.00 + 0.41+0.10/-0.08 _ 0.05 0.25 + _ 0.10 4.90 + 3.81+0.15/-0.20 _ 0.10 6.00 + _ 0.05 5.75 + _ 0.20 3.58 + 1.27 BSC _ 0.10 0.51 + 1.10 MIN _ 0.10 0.61 + _ 0.07 0.13 + 0 ~ 12 PSOP-8 V V MARKING A mJ 54 W KU2751 K Type Name 2.5 Lot No Tj 150 Tstg -55 150 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case (Note1) RthJC 2.3 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 50 /W Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1″ 1″Pad of 2 oz copper. Note 3) L=78.5 H, IAS=52A, VDD=15V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) D D D D S S S G 2010. 1. 18 D D S Revision No : 0 S D D S G 1/4 KU2751K ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250 A 30 - - V Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 A Gate to Source Leakage Current IGSS VGS= - - 100 Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 Drain to Source Breakdown Voltage RDS(ON) Drain to Source On Resistance gfs Forward Transconductance 20V, VDS=0V VGS=10V, ID=20A (Note4) - 9.2 11.0 VGS=4.5V, ID=20A (Note4) - 12.5 15.0 VDS=5V, ID=20A (Note4) - 43 - - 777 - - 271 - - 74 - - 1.0 - - 12.5 - - 6.8 - - 2.4 - nA V mΩ S Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge VGS=10V Qg VGS=4.5V Qg VDS=15V, f=1MHz, VGS=0V f=1MHz VDS=15V, VGS=10V, ID=20A (Note4) Qgs Gate to Drain Charge Qgd - 2.2 - Turn-On Delay Time td(on) - 7.0 - - 2.9 - - 21.0 - - 2.6 - tr td(off) Turn-Off Delay Time VDD=15V, VGS=10V ID=20A, RG=1.6 (Note4) tf Turn-Off Fall Time Ω nC Gate to Source Charge Turn-On Rise Time pF ns Source to Drain Diode Ratings VSD Source to Drain Forward Voltage VGS=0V, IS=20A (Note4) - 0.8 1.2 V Reverse Recovery Time trr IS=20A, dI/dt=100A/ s (Note4) - 18.0 - ns Reverse Recovered Charge Qrr IS=20A, dI/dt=100A/ s (Note4) - 7.5 - nC Note 4) Pulse Test : Pulse width <300 2010. 1. 18 , Duty cycle < 2% Revision No : 0 2/4 KU2751K Drain Current ID (A) 50 10V 5V 4.5V 4.0V 40 3.5V 30 20 VGS=3.0V 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain to Source On Resistance RDS(ON) (mΩ) Fig2. RDS(on) - ID Fig1. ID - VDS 20 16 VGS=4.5V 12 VGS=10V 8 4 0 0 10 Drain to Source Voltage VDS (V) Normalized On Resistance RDS(ON) Drain Current ID (A) VDS = 5V 40 30 20 Tj=25 C 10 Tj=-55 C 1 2 3 4 5 1.8 1.6 VGS=10V, ID=20A 1.4 1.2 VGS=4.5V, ID=20A 1.0 0.8 0.6 0.4 0.2 0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) Fig6. IS - VSD Fig5. Vth - Tj 102 1.6 VDS = VGS, ID = 250µA Reverse Drain Current IS (A) Normalized Gate to Source Threshold Voltage 50 2.0 Gate to Source Voltage VGS (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) 2010. 1. 18 40 Fig4. RDS(ON) - Tj 50 0 0 30 Drain Current ID (A) Fig3. ID - VGS Tj=150 C 20 Revision No : 0 101 Tj=150 C Tj=25 C Tj=-55 C 100 10-1 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage VSD (V) 3/4 Fig8. C - VDS Fig7. RDS(ON) - VGS 104 50 40 30 20 Tj=150 C Tj=25 C 10 Ciss 103 Coss Crss 102 101 0 0 2 4 6 8 10 0 12 5 10 15 20 25 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS Fig10. Safe Operation Area 10 30 103 VDS = 15V, ID = 20A 8 Drain Current ID (A) Gate to Source Voltage VGS (V) f=1MHz ID=20A Capacitance C (pF) Drain to Source On Resistance RDS(ON) (mΩ) KU2751K 6 4 2 102 100us IT M LI 101 R DS N) (O 1ms 10ms DC 100 VGS= 10V SINGLE PULSE TC= 25 C 0 0 3 6 9 12 15 10-1 10-2 Gate to Charge Qg (nC) 10-1 100 101 102 Drain to Source Voltage VDS (V) Normalized Effective Transient Thermal Resistance Fig11. Transient Thermal Response Curve 101 100 0.5 0.2 0.1 0.05 10-1 0.02 0.01 PDM Single Pulse t1 t2 RthJC=2.14 C/W 10-2 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration tW(sec) 2010. 1. 18 Revision No : 0 4/4