SEMICONDUCTOR KMB3D9N40TA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter. E K DIM A B 3 D F D G VDSS=40V, ID=3.9A C 2 G A FEATURES B 1 Drain-Source ON Resistance H I J K L C L RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=58m (Max.) @ VGS=4.5V E F G Super High Dense Cell Design I J MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H J TSM MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS 20 Marking V Type Name DC@Ta=25 Drain Current ID DC@Ta=70 3.9 3.1 Pulsed IDP 16 Drain-Source-Diode Forward Current IS 0.8 Ta=25 Drain Power Dissipation PD Ta=70 A W Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA 100 1 FR4 Board, t A 0.8 150 Note > *Surface Mounted on 1 A2 1.25 Tj Maximum Junction Temperature Lot No. /W 5sec PIN CONNECTION (TOP VIEW) D 3 3 2008. 6. 10 2 1 G S 2 Revision No : 0 1 1/5 KMB3D9N40TA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 40 - - V VGS=0V, VDS=32V - - 0.5 VGS=0V, VDS=32V, Tj=55 - - 10 - - 100 Static Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250 A IDSS Drain Cut-off Current A Gate Leakage Current IGSS VGS= Gate Threshold Voltage Vth* VDS=VGS, ID=250 A 1.0 - 3.0 VGS=10V, ID=3.9A - 29 45 VGS=4.5V, ID=3.5A - 42 58 VDS=10V, ID=3.9A - 11 - - 446 - - 78 - 20V, VDS=0V RDS(ON)* Drain-Source ON Resistance gfs* Forward Transconductance nA V m S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 40 - Total Gate Charge Qg* - 9.3 - Gate-Source Charge Qgs* - 1.8 - Gate-Drain Charge Qgd* - 2.0 - Turn-On Delay Time td(on)* - 10.3 - VDD=20V, VGS=10V - 5.4 - ID=1A, RG=6 - 28.2 - - 4.0 - - 0.8 1.2 tr* Turn-On Rise Time td(off)* Turn-Off Delay Time VDS=20V, f=1MHz, VGS=0V VDS=20V, VGS=10V, ID=3.9A tf* Turn-Off Fall Time pF nC ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage Note > *Pulse Test : Pulse width <300 2008. 6. 10 VGS=0V, IS=1A V , Duty cycle < 2% Revision No : 0 2/5 KMB3D9N40TA 2008. 6. 10 Revision No : 0 3/5 KMB3D9N40TA 2008. 6. 10 Revision No : 0 4/5 KMB3D9N40TA 2008. 6. 10 Revision No : 0 5/5