SMD Type Product specification 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Collector current Collector peak current Collector power dissipation IC 1 A iC(peak)*1 2 A PC*2 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to 150 *1 PW 10ms, duty cycle 20% *2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SD1419 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 120 V Collector to emitter breakdown voltage V(BR)CEO IC = 1 mA, RBE = 100 V Emitter to base breakdown voltage V(BR)EBO IE= 10 ìA, IC = 0 5 V Collector cutoff current ICBO DC current transfer ratio hFE VCB = 100 V, IE = 0 10 VCE = 5 V, IC = 150 mA* 60 VCE = 5 V, IC = 500 mA* 30 ìA 200 VCE(sat) IC = 500 mA, IB = 50 mA* 1 V Base to emitter voltage VBE VCE = 5 V, IC = 150 mA* 1.5 V Gain bandwidth product fT VCE = 5 V, IC = 150 mA* 140 MHz VCB = 10 V, IE = 0, f = 1 MHz 12 pF Collector to emitter saturation voltage Collector output capacitance Cob *Pulse test hFE Classification Marking DD DE hFE 60 120 100 200 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2