TYSEMI 2SD1421

Transistors
SMD Type
Product specification
2SD1421
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
180
V
Collector to emitter voltage
VCEO
160
V
Emitter to base voltage
VEBO
5
V
IC
1.5
A
iC(peak)*1
3
A
PC*2
1
W
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
*1 PW
10ms, duty cycle 20%
*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC = 1 mA, IE = 0
180
V
Collector to emitter breakdown voltage
V(BR)CEO
IC = 10mA, RBE =
160
V
Emitter to base breakdown voltage
V(BR)EBO
IE= 1mA, IC = 0
5
V
Collector cutoff current
ICBO
DC current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage
VBE
VCB = 160 V, IE = 0
10
VCE = 5 V, IC = 0.15A
60
VCE = 5 V, IC = 0.5A
30
ìA
200
IC = 0.5A, IB = 50 mA,pulse
1.0
V
VCE = 5 V, IC = 0.15mA,pulse
0.9
V
hFE Classification
Marking
ED
EE
hFE
60 120
100 200
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