KEXIN 2SB930A

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB930A
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Features
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Low collector-emitter saturation voltage VCE(sat).
+0.15
0.50 -0.15
High forward current transfer ratio hFE which has satisfactory linearity.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-80
V
Collector-emitter voltage
VCEO
-80
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-4
A
Peak collector current
ICP
-8
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter voltage
Testconditons
VCEO
IC = -30 mA, IB = 0
Min
Typ
Max
-80
Unit
V
ICES
VCE = -80 V,VBE = 0
-400
ìA
ICEO
VCE = -60 V,IB = 0
-700
ìA
Emitter-base cutoff current
IEBO
VEB = -5 V, IC = 0
-1
mA
Forward current transfer ratio
hFE
Collector cutoff curent
Base to emitter voltage
VBE
Collector-emitter saturation voltage
VCE = -4 V, IC = -1 A
70
VCE = -4 V, IC = -3 A
15
250
VCE = -4 V, IC = -3 A
-2
VCE(sat) IC = -4 A, IB = -0.4 A
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
VCE = -10 V, IC = -0.5 A , f = 10 MHz
IC = -4 A,IB1 = -0.4 A,IB2 = 0.4 A,
VCC = -50 V
-1.5
V
V
20
MHz
0.2
ìs
0.5
ìs
0.2
ìs
hFE Classification
Rank
Q
P
hFE
70 150
120 250
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