KEXIN 2SD1253

Transistors
SMD Type
Silicon NPN Triple Diffusion Planar Type
2SD1253,2SD1253A
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Features
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
+0.15
4.60-0.15
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Low collector to emitter saturation voltage VCE(sat).
+0.15
0.50 -0.15
High forward current transfer ratio hFE which has satisfactory linearity.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
2SD1253
VCBO
2SD1253A
Collector-emitter voltage
2SD1253
Rating
Unit
60
V
80
V
60
V
80
V
VEBO
5
V
Collector current
IC
4
A
Peak collector current
ICP
8
A
VCEO
2SD1253A
Emitter-base voltage
Collector power dissipation
Ta = 25
PC
1.3
W
40
Tc = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SD1253,2SD1253A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter voltage
2SD1253
VCEO
Testconditons
IC = 30 mA, IB = 0
2SD1253A
Base-emitter voltage
VBE
Collector-emitter cutoff current
2SD1253
ICES
2SD1253A
Collector-emitter cutoff current
2SD1253
ICEO
2SD1253A
Emitter-base cutoff current
IEBO
Forward current transfer ratio
hFE
Forward current transfer ratio
Typ
Max
Unit
60
V
80
V
VCE = 4 V, IC = 3 A
2
V
VCE = 60 V, VBE = 0
400
ìA
VCE = 80 V, VBE = 0
400
ìA
VCE = 30 V, IB = 0
700
ìA
VCE = 60 V, IB = 0
700
ìA
VEB = 5 V, IC = 0
1
mA
VCE = 4 V, IC = 1 A
40
VCE = 4 V, IC = 3 A
15
250
VCE(sat) IC = 4 A, IB = 0.4 A
Collector-emitter saturation voltage
1.5
V
VCE = 5 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC=4A
0.4
ìs
Storage time
tstg
IB1=-IB2=0.4 A
1.2
ìs
VCC=50V
0.5
ìs
Transition frequency
fT
Fall time
tf
hFE Classification
2
Min
Rank
R
Q
P
hFE
40 90
70 150
120 250
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