TYSEMI 2SD1719

Transistors
SMD Type
Product specification
2SD1719
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
0.127
max
+0.25
2.65 -0.1
High emitter-base voltage (Collector open) VEBO
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High forward current transfer ratio hFE which has satisfactory linearity
+0.15
0.50 -0.15
Features
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
6
A
Peak collector current
ICP
12
A
Base current
IB
3
A
Collector power dissipation
PC
Ta = 25
40
W
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-emitter voltage
VCEO
IC = 25 mA, IB = 0
Collector-base cutoff curent
ICBO
VCB = 100 V,IE = 0
Emitter-base cutoff current
IEBO
VEB = 15 V, IC = 0
Forward current transfer ratio
hFE
VCE = 4 V, IC = 1 A
Collector-emitter saturation voltage
Min
Typ
fT
Turn-on time
ton
300
Storage time
tstg
Fall time
IC = 5 A,IB1 = -IB2 = 0.1 A, VCC = 50V
tf
100
ìA
100
ìA
2000
0.5
VCE = 12 V, IC = 0.5 A , f = 10 MHz
Unit
V
VCE(sat) IC = 5 A, IB = 0.1 A
Transition frequency
Max
60
V
30
MHz
0.3
ìs
1.5
ìs
0.6
ìs
hFE Classification
Rank
Q
P
hFE
300 1200
800 2000
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