Transistors SMD Type Medium Power Transistor 2SC4097 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ICMax. = 0.5A 1 0.55 High ICMax. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low VCE(sat). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Optimal for low voltage operation. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 100ìA 40 V Collector-emitter voltage VCEO IC = 1mA 32 V Emitter-base voltage VEBO IE = 100ìA 5 Collector cutoff current ICBO VCB = 20V 1 A Emitter cutoff current IEBO VEB = 4V 1 A hFE VCE = 3V, IC = 10mA DC Current Gain V 120 390 VCE(sat) IC/IB = 500mA/50mA Collector-emitter saturation voltage Output capacitance Cob Transition frequency fT 0.6 V VCB = 10V, IE = 0A, f = 1MHz 6.5 pF VCE = 5V, IE = -20mA, f = 100MHz 250 MHz hFE Classification Marking hFE CQ 120 270 CR 180 390 www.kexin.com.cn www.kesenes.com 1 Transistors Diodes SMD Type 2SC4097 Typlcal Characteristics Fig.1 Grounded Emitter Propagation Characteristics Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage 2 www.kexin.com.cn Fig.2 Grounded Emitter Output Fig.3 Grounded Emitter Output Characteristics Characteristics Fig.5 DC Current Gain vs. Fig. 6 Gain Bandwidth Product vs. Collector Current Emitter Current