KEXIN 2SD1259A

Transistors
SMD Type
Silicon NPN Triple Diffusion Planar Type
2SD1259;2SD1259A
TO-252
+0.15
1.50 -0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Features
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
Satisfactory linearity of forward current transfer ratio hFE.
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High forward current transfer ratio hFE.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
2SD1259
VCBO
2SD1259A
Collector-emitter voltage
2SD1259
Rating
Unit
80
V
100
V
60
V
80
V
VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
Base current
IB
1
A
1.3
W
40
W
VCEO
2SD1259A
Emitter-base voltage
Collector power dissipation
Ta = 25
PC
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter voltage
2SD1259
VCEO
Testconditons
IC = 25 mA, IB = 0
2SD1259A
Collector-base cutoff current
2SD1259
ICBO
2SD1259A
Min
Typ
V
80
V
VCB = 80 V, IE = 0
100
ìA
100
ìA
100
ìA
100
ìA
ICEO
VCE = 40 V, IB = 0
Emitter-base cutoff current
IEBO
VEB = 6 V, IC = 0
Forward current transfer ratio
hFE
VCE = 4 V, IC = 0.5 A
500
2500
VCE(sat) IC = 2 A, IB = 0.05 A
Transition frequency
VCE = 12 V, IC = 0.2 A, f = 10 MHz
fT
Unit
VCB = 100 V, IE = 0
Collector-emitter cutoff current
Collector-emitter saturation voltage
Max
60
1.0
50
V
MHz
hFE Classification
Rank
Q
P
O
hFE
500 1000
800 1500
1200 2500
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