Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1172A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Low collector-emitter saturation voltage VCE(sat). +0.28 1.50 -0.1 +0.2 9.70 -0.2 High forward current transfer ratio hFE which has satisfactory linearity. +0.15 0.50 -0.15 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -3 A Peak collector current ICP -5 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO Base to emitter voltage VBE VCE = -4 V, IC = -3 A -1.8 V Collector-emitter cutoff curent ICES VCE = -80 V,VBE = 0 -200 ìA Collector-emitter cutoff curent ICEO VCE = -60 V,IB = 0 -300 ìA Emitter-base cutoff current IEBO VEB = -5 V, IC = 0 -1 mA Forward current transfer ratio hFE Collector-emitter saturation voltage IC = -30 mA, IB = 0 -80 VCE = -4 V, IC = -1 A 70 VCE = -4 V, IC = -3 A 10 V 250 VCE(sat) IC = -3 A, IB = -0.375 A Transition frequency fT Turn-on time ton Storage time tstg Fall time tf VCE = -10 V, IC = -0.5 A , f = 10 MHz IC = -1 A,IB1 = -0.1 A,IB2 = 0.1 A, VCC = -50 V 1.2 V V 30 MHz 0.5 ìs 1.2 ìs 0.3 ìs hFE Classification Rank Q P hFE 70 150 120 250 www.kexin.com.cn 1