KEXIN 2SD1815

Transistors
SMD Type
High-Current Switching Applications
2SD1815
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
4.60-0.15
0.127
max
+0.15
5.55 -0.15
+0.1
0.80-0.1
+0.25
2.65 -0.1
Fast switching time.
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High fT.
+0.15
0.50 -0.15
Excllent linearity of hFE.
3 .8 0
Low collector-to-emitter saturation voltage.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Collector current (pulse)
ICP
6
A
Collector dissipation
PC
1
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SD1815
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 100V , IE = 0
1
ìA
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
1
ìA
DC current Gain
hFE
Gain bandwidth product
VCE = 5V , IC = 0.5A
70
VCE = 5V , IC = 2A
40
400
fT
VCE = 10V , IC = 0.5A
180
MHz
Cob
VCB = 10V , f = 1MHz
25
pF
Collector-emitter saturation voltage
VCE(sat)
IC = 1.5A , IB = 0.15A
150
400
mV
Base-to-emitter saturation voltage
VBE(sat)
IC = 1.5A , IB = 0.15A
0.9
1.2
V
Output capacitance
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
120
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
100
V
6
V
Emitter-to-base breakdown voltage
V(BR)EBO
IE = 10ìA , IC = 0
Turn-on time
ton
100
ns
Storage time
tstg
900
ns
tf
50
ns
Fall time
hFE Classification
2
Min
Rank
Q
R
S
T
hFE
70 140
100 200
140 280
200 400
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