MOSFET SMD Type MOS Fied Effect Transistor 2SJ166 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 input impedance. 1 0.55 Not necessary to consider dreving current because of its high +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Possible to reduce the number of parts by omitting the bias resistor. 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -50 V VDS=0 VGSS 7.0 V ID 100 mA Gate to source voltage Drain current (DC) 200 Drain current(pulse) * ID Total power dissipation PT 200 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 ms; d mA mW 50%. Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate cut-off voltage Testconditons IDSS VDS=-50V,VGS=0 IGSS VGS= Drain to source on-state resistance Yfs Ciss Output capacitance Coss Max Unit -10 A 1.0 A VDS=-5.0V,ID=-20mA RDS(on) VGS=-4.0V,ID=-20mA Input capacitance Typ 7.0V,VDS=0 VGS(off) VDS=-5.0V,ID=-1.0 Forward transfer admittance Min -1.0 -2.1 30 50 18 VDS=-5.0V,VGS=0,f=1Mhz -3.0 A V ms 50 18 pF 11 pF Reverse transfer capacitance Crss 3 pF Turn-on delay time td(on) 40 ns 58 ns 62 ns 62 ns Rise time tr Turn-off delay time td(off) Fall time tf VGS(on)=-5.0V,RG=10 20mA RL=250 ,VDD=-5.0V,ID=- Marking Marking H11 www.kexin.com.cn 1