MOSFET SMD Type Product specification 2SK1582 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Possible to reduce the number of parts by omitting the bias resistor 0.55 +0.1 1.3-0.1 Not necessry to consider driving current because of its thgh input impedance. +0.1 2.4-0.1 Can be driven by Ics having a 5V single power supply. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V ID 200 mA Drain current (DC) 400 Drain current(pulse) * ID Power dissipation PD 200 Channel temperature Tch 150 Tstg -55 to +150 Storage temperature * PW 10ms, duty cycle mA mW 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VDS=5.0V,ID=10mA 20 RDS(on) Input capacitance Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Turn-off delay time 1.2 1.5 60 Unit A A V ms VGS=4.0V,ID=10mA 2.2 5.0 VGS=10V,ID=10mA 1.4 3.0 28 pF 30 pF 7 pF td(on) 55 ns tr 200 ns 180 ns 250 ns td(off) Fall time Max 10 0.9 Yfs Typ 10 VGS(off) VDS=5.0V,ID=10 A Output capacitance Rise time Min VDS=5.0V,VGS=0,f=1MHZ ID=10mA,VGS(on)=5.0V,RL=500 ,VDD=5.0V,RG=10 tf Marking Marking G15 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1