KEXIN 2SK1657

MOSFET
SMD Type
MOS Field Effect Transistor
2SK1657
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
IGSS= 5nA MAX.@VGS= 3.0V
+0.1
1.3-0.1
+0.1
2.4-0.1
Has low gate leakage current
0.4
3
Directly driven by Ics having a 3V power supply.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
7
V
ID
100
mA
Drain current (DC)
200
Drain current(pulse) *
ID
Power dissipation
PD
200
Channel temperature
Tch
150
Tstg
-55 to +150
Storage temperature
* PW
10ms, duty cycle
mA
mW
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=30V,VGS=0
Gate leakage current
IGSS
VGS= 3.0V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
VGS(off) VDS=3.0V,ID=1 A
Yfs
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
VDS=3.0V,ID=10mA
Min
Typ
Max
Unit
1.0
A
5.0
0.9
1.2
20
40
1.5
V
ms
VGS=2.5V,ID=10mA
25
45
VGS=4.0V,ID=10mA
18
25
VDS=3.0V,VGS=0,f=1MHZ
nA
15
pF
10
pF
Reverse transfer capacitance
Crss
1.5
pF
Turn-on delay time
td(on)
95
ns
360
ns
150
ns
150
ns
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
ID=10mA,VGS(on)=3V,RL=300
,VDD=3.0V,RG=10
Marking
Marking
G19
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