MOSFET SMD Type MOS Fied Effect Transistor 2SJ185 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 input impedance. 0.55 Not necessary to consider driving current because of its high +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 3V poer supply. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Possible to reduce the number of parts by omitting the bias resistor 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -50 V VDS=0 VGSS 7.0 V Drain current (DC) ID 100 mA Drain current(pulse) * ID 200 mA Gate to source voltage Power dissipation PD 200 Operating temperature Topt -55 to +80 Storage temperature Tstg -55 to +150 * PW 10 ms; d mW 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-50V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Typ 7.0V,VDS=0 VGS(off) VDS=-3V,ID=-1 Forward transfer admittance Min A VDS=-3V,ID=-10mA -1.2 -1.6 20 42 Max Unit -10 A 5 A -2.0 VGS=-2.5V,ID=-1mA 25 40 VGS=-4.0V,ID=-10mA 13 20 VDS=-3V,VGS=0,f=1MHZ V ms 22 pF 12 pF Reverse transfer capacitance Crss 4 pF Turn-on delay time td(on) 80 ns 230 ns 40 ns 70 ns Rise time tr Turn-off delay time td(off) Fall time tf VGS(on)=-3V,RG=10 20mA RL=150 ,VDD=-3V,ID=- Marking Marking H12 www.kexin.com.cn 1