KEXIN 2SK1133

MOSFET
SMD Type
MOS Field Effect Transistor
2SK1133
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Not necessary to consider driving current because of
0.4
3
Directly driven by Ics having a 5V power source.
1
Possible to reduce the number of parts by omitting the biasresistor.
0.55
its high input impedance.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
50
V
Gate to source voltage
VGSS
7.0
V
Drain current (DC)
ID
100
mA
Drain current(pulse) *
ID
200
mA
Power dissipation
PD
200
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10ms, duty cycle
mW
50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=50V,VGS=0
Gate leakage current
IGSS
VGS=
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Typ
Max
-10
7V,VDS=0
VGS(off) VDS=5.0V,ID=1
Yfs
Min
A
VDS=5.0V,ID=20mA
RDS(on) VGS=4V,ID=20mA
Ciss
VDS=5.0V,VGS=0,f=1MHZ
10
1.0
20
1.7
2.0
40
16
Unit
A
A
V
ms
50
7
pF
6
pF
2
pF
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
6
ns
tr
25
ns
td(off)
36
ns
tf
35
ns
Rise time
Turn-off delay time
Fall time
VGS(on)=0,VDD=5V,f=1MHz
Marking
Marking
G11
www.kexin.com.cn
1