MOSFET SMD Type Silicon N-Channel MOSFET 2SK3065 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 Low on resistance. High-speed switching. 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 undervoltage actuation (2.5V actuation). +0.1 0.80-0.1 1 Optimum for a pocket resource etc. because of +0.1 4.00-0.1 +0.1 1.80-0.1 Features Driving circuit is easy. Easy to use parallel. +0.1 3.00-0.1 1 Gate 1. Source Base 1. +0.1 0.40-0.1 It is strong to an electrostatic discharge. 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ID Drain current 20 V 2 A Idp * 8 A PD 0.5 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Power dissipation * PW TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain to source breakdown voltage VDSS ID=1mA,VGS=0 Drain cut-off current IDSS VDS=60V,VGS=0 IGSS VGS= 20V,VDS=0 VGS(th) VDS=10V,ID=1mA 0.8 VDS=10V,ID=1A 1.5 Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Typ Max 60 Unit V 10 10 1.5 A A V S VGS=4V,ID=1A 0.25 0.32 VGS=2.5V,ID=1A 0.35 0.45 160 pF 85 pF Crss 25 pF Turn-on delay time ton 20 ns Rise time tr 50 ns Turn-off delay time toff 120 ns Fall time tf 70 ns VDS=10V,VGS=0,f=1MHZ ID=1A,VGS(on)=4V,RL=30 ,VDD=30V,RG=10 Marking Marking KE www.kexin.com.cn 1