KEXIN 2SK2329S

IC
MOSFET
SMD Type
Silicon N-Channel MOSFET
2SK2329S
TO-252
Features
Low on-resistance
High speed switching
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
+0.1
0.80-0.1
0.127
max
+0.25
2.65-0.1
Suitable for Switching regulator, DC-DC converter
+0.28
1.50-0.1
+0.2
9.70-0.2
2.5 V gate drive device can be driven from 3 V source
+0.15
0.50-0.15
Low drive current
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
10
10
ID
Drain current
V
A
Idp *
40
A
Power dissipation
PD
20
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain to source breakdown voltage
VDSS
ID=10mA,VGS=0
Gate to source voltage
VGSS
IG= 200 A,VGS=0
Drain cut-off current
IDSS
VDS=25V,VGS=0
Gate leakage current
IGSS
VGS= 6.5V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
VGS(off) VDS=10V,ID=1mA
Yfs
RDS(on)
VDS=10V,ID=5A
VGS=4V,ID=5A
VGS=2.5V,ID=5A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Min
Typ
Max
30
V
10
V
0.4
10
Unit
100
A
10
A
1.4
18
V
S
0.03
0.04
0.04
0.06
1250
pF
540
pF
Crss
120
pF
ton
20
ns
145
ns
VDS=10V,VGS=0,f=1MHZ
ID=5A,VGS(on)=4V,RL=2
225
ns
125
ns
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