Transistors IC SMD Type N-channel enhancement mode MOSFET 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 For high-speed switching 5 .6 0 High avalanche resistance +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage VGSS 30 V Drain current ID 20 A Peak drain current IDP 80 A Avalanche energy capability * EAS 668 mJ Power dissipation PD 50 W 1.4 Power dissipation Ta = 25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25 www.kexin.com.cn 1 Transistors IC SMD Type 2SK3731 Electrical Characteristics Ta = 25 Parameter Testconditons Min ID = 1 mA, VGS = 0 230 Vth VDS = 10 V, ID = 1 mA 2.0 Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 Gate-source cutoff current IGSS Drain-source surrender voltage Gate threshold voltage VDSS VGS = RDS(on) VGS = 10 V, ID = 10 A Forward transfer admittance |YfS| VDS = 10 V, ID = 10 A Short-circuit forward transfer capacitance Ciss Short-circuit output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Turn-off delay time Fall time Diode foward voltage Tr VDS = 25 V, VGS = 0, f = 1 MHz VDD 100 V, ID = 10 A RL = 10Ù, VGS = 10 V td(off) Unit V 4.0 65 7 Max V 10 ìA 1 ìA 82 mÙ 14 S 360 pF 394 pF 49 pF 31 ns 27 ns 214 ns 47 tf VDSF Typ 30 V, VDS = 0 Drain-source ON resistance Rise time IDR = 20 A, VGS = 0 ns ?1.5 V Reverse recovery time trr L = 230 ìH, VDD = 100 V 142 Reverse recovery charge Qrr IDR = 10 A, di/dt = 100 A/ìs 668 nC Gate charge load Qg 43 nC Gate-source charge Qgs 6.6 nC Gate-drain charge 2 Symbol Qgd VDD = 100 V, ID = 10 A,VGS = 10 V ns 16 nC Thermal resistance (ch-c) Rth(ch-c) 2.5 /W Thermal resistance (ch-a) Rth(ch-a) 89.2 /W www.kexin.com.cn