KEXIN 2SK3740

MOSFET
SMD Type
MOS Field Effect Transistor
2SK3740
+0.1
1.27-0.1
TO-263
Features
Gate voltage rating:
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
30 V
RDS(on) = 160 mÙ MAX. (VGS = 10 V, ID = 10 A)
5.60
+0.2
15.25-0.2
+0.2
8.7-0.2
Low on-state resistance
0.1max
+0.1
1.27-0.1
QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)
Surface mount package available
+0.2
2.54-0.2
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
+0.2
5.28-0.2
Low gate charge
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
30
V
ID
20
A
Idp *
60
A
Drain current
Power dissipation
TA=25
1.5
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
100
TC=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=250V,VGS=0
Gate leakage current
IGSS
VGS= 30V,VDS=0
VGS(off)
VDS=10V,ID=1mA
2.5
Yfs
VDS=10V,ID=10A
7.0
RDS(on)
VGS=10V,ID=10A
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Ciss
VDS=10V,VGS=0,f=1MHZ
Typ
Max
10
10
3.5
4.5
15
0.12
Unit
A
A
V
S
0.16
Ù
1720
pF
Output capacitance
Coss
330
pF
Reverse transfer capacitance
Crss
170
pF
Turn-on delay time
ton
17
ns
17
ns
49
ns
9
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
ID=10A,VGS(on)=10V,RG=0 ,VDD=125V
VDD = 200V
VGS = 10 V
ID =20A
47
nC
7
nC
25
nC
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