KEXIN BC868

Transistors
SMD Type
NPN Medium Power Transistor
BC868
Features
High current
Two current gain selections
1.2 W total power dissipation.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage (open emitter)
VCBO
32
V
Collector-emitter voltage (open base)
VCEO
20
V
Emitter-base voltage (open collector)
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICM
2
A
Peak base current
IBM
200
mA
0.5
W
Ptot
0.85
W
1.2
W
Total power dissipation
*1 and *2
*1 and *3
*1 and *4
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
*1 and *2
250
K/W
*1 and *3
147
K/W
*1 and *4
104
K/W
20
K/W
Thermal resistance from junction to solder point
Rth(j-a)
Rth(j-s)
*1.Refer to SOT89 standard mounting conditions.
*2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
*3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
*4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
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1
Transistors
SMD Type
BC868
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
BC868
BC868-25
Collector-emitter saturation voltage
hFE
hFE
VCE(sat)
VBE
Base to emitter voltage
Max
Unit
VCB = 25 V, IE = 0
Testconditons
Min
Typ
100
nA
VCB = 25 V, IE = 0; Tj = 25
10
ìA
100
nA
VEB = 5 V, IC = 0
IC = 5 mA; VCE = 10 V
50
IC = 500 mA; VCE = 1 V
85
IC = 1 A; VCE = 1 V
60
IC = 500 mA; VCE = 1 V
160
375
375
IC = 1 A; IB = 100 mA
500
mV
IC = 5 mA; VCE = 10 V
700
mV
1
V
IC = 1 A; VCE = 1 V
Collector capacitance
CC
IE = Ie = 0; VCB = 10 V; f = 1 MHz
Transition frequency
fT
IC = 50 mA; VCE = 5 V; f = 100 MHz
hFE Classification
2
TYPE
BC868
BC868-25
Marking
CAC
CDC
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40
22
pF
170
MHz