KEXIN BC869

Transistors
SMD Type
PNP Medium Power Transistor
BC869
Features
High current.
Three current gain selections.
1.2 W total power dissipation.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-32
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICM
-2
A
Peak base current
IBM
-200
mA
0.5
W
0.85
W
1.2
W
Total power dissipation
*1 and *2
*1 and *3
Ptot
*1 and *4
Storage temperature
Tstg
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Tj
150
Ramb
-65 to +150
*1 and *2
*1 and *3
Rth(j-a)
*1 and *4
Thermal resistance from junction to solder point
-65 to +150
Rth(j-s)
250
K/W
147
K/W
104
K/W
20
K/W
*1.Refer to SOT89 standard mounting conditions.
*2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
*3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
*4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
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Transistors
SMD Type
BC869
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
BC868
hFE
Testconditons
Min
Typ
VCB = -25 V, IE = 0
-100
nA
-10
ìA
VEB = -5 V, IC = 0
-100
nA
IC = -5 mA; VCE = -10 V
50
IC = -500 mA; VCE = -1 V
85
IC = -1 A; VCE = -1 V
60
375
hFE
IC = -500 mA; VCE = -1 V
100
250
BC869-25
hFE
IC = -500 mA; VCE = -1 V
160
375
VCE(sat)
Base to emitter voltage
VBE
IC = -1 A; IB = -100 mA
-500
mV
IC = -5 mA; VCE = -10 V
-700
mV
-1
V
IC = -1 A; VCE = -1 V
Collector capacitance
CC
IE = Ie = 0; VCB = -10 V; f = 1 MHz
Transition frequency
fT
IC = -50 mA; VCE = -5 V; f = 100 MHz
hFE Classification
TYPE
BC869
BC869-16
BC869-25
Marking
CEC
CGC
CHC
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Unit
VCB = -25 V, IE = 0; Tj = 25
BC868-16
Collector-emitter saturation voltage
2
Max
40
28
pF
140
MHz