KEXIN BF822W

Transistors
SMD Type
NPN High-Voltage Transistor
BF822W
Features
Low current (max. 50 mA)
High voltage (max. 250 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage (open emitter)
VCBO
250
V
Collector-emitter voltage (open base)
VCEO
250
V
Emitter-base voltage (open collector)
VEBO
5
V
Collector current
IC
50
mA
Peak collector current
ICM
100
mA
Peak base current
IBM
50
mA
mW
Ptot
200
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
625
Total power dissipation * (Tamb
25 ;)
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Testconditons
Min
Typ
Max
Unit
IE = 0; VCB = 200 V
10
nA
ìA
IE = 0; VCB = 200 V; Tj = 150
10
Emitter cutoff current
IEBO
IC = 0; VEB = 5 V
50
nA
DC current gain
hFE
IC = 25 mA; VCE = 20 V
IC = 30 mA; IB = 5 mA
600
mV
IC = 0; VCB = 30 V; f = 1 MHz
1.6
pF
Collector-emitter saturation voltage *
Feedback capacitance
Cre
Transition frequency
* Pulse test: tp
VCEsat
fT
300 ìs; ä
IC = 10 mA; VCE = 10 V; f=100MHz
50
60
MHz
0.02.
Marking
Marking
1W
www.kexin.com.cn
1