KEXIN BSP16

Transistors
SMD Type
PNP High-Voltage Transistor
BSP16
SOT-223
Unit: mm
+0.2
3.50-0.2
6.50
Features
+0.1
3.00-0.1
High voltage (max. 350 V).
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
3 Emitter
4 Collector
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
collector-base voltage (open emitter)
VCBO
-350
V
collector-emitter voltage (open base)
VCEO
-300
V
emitter-base voltage (open collector)
VEBO
-6
V
IC
-200
mA
collector current (DC)
base current (DC)
total power dissipation
Tamb
25
*
storage temperature
junction temperature
IB
-200
mA
Ptot
1.28
W
Tstg
-65 to 150
Tj
150
Tamb
-65 to 150
thermal resistance from junction to ambient *
Rth j-a
97
K/W
thermal resistance from junction to soldering point
Rth j-s
16
K/W
operating ambient temperature
* . Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad
for collector 1 cm2.
Electrical Characteristics Ta = 25
Max
Unit
collector cut-off current
Parameter
Symbol
ICBO
IE = 0; VCB = -280 V
Testconditons
Min
-100
nA
emitter cut-off current
IEBO
IC = 0; VEB = -6 V
-100
nA
DC current gain
hFE
IC = -50 mA; VCE = -10 V
30
Typ
120
IC = -50 mA; IB = -5 mA
-2
V
collector capacitance
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
15
pF
transition frequency
fT
IC = -10 mA; VCE = -10 V; f = 100 MHz
collector-emitter saturation voltage
VCEsat
15
MHz
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