KEXIN FMMT718

Transistors
IC
SMD Type
Switching Transistor
FMMT718
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
IC CONT 2.5A.
0.4
3
625mW power dissipation.
1
Excellent hfe characteristics up to 10A (pulsed).
0.55
IC up to 10A peak pulse current.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Extremely low saturation voltage e.g. 10mV typ..
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Exhibits extremely low equivalent on-resistance; RCE(sat) .
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-20
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Peak collector current
ICM
-6
A
Collector current
IC
-1.5
A
Base current
Power dissipation
Operating and storage temperature range
IB
-500
mA
Ptot
625
mW
Tj,Tstg
-55 to +150
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1
Transistors
IC
SMD Type
FMMT718
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-20
-65
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=-10mA
-20
-55
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-5
-8.8
Collector cutoff current
ICBO
Emitter cut-off current
IEBO
V
VCB=-15V
-100
nA
VEB=-4V
-100
nA
Collector-emitter saturation voltage *
IC=-0.1A, IB=-10mA
VCE(sat) IC=-1A, IB=-10mA
IC=-1.5A, IB=-50mA
-16
-130
-145
-40
-200
-220
mV
Base-emitter saturation voltage *
VBE(sat) IC=-1.5A,IB=-50mA
-0.87
-1
V
Base-emitter voltage *
VBE(ON) IC=-2A,VCE=-2V
-0.81
-1
V
DC current gain *
hFE
Current-gain-bandwidth product
fT
IC=-10mA, VCE=-2V
IC=-0.1A, VCE=-2V
IC=-2A, VCE=-2V
IC=-4A, VCE=-2V
IC=-6A, VCE=-2V
IC=-50mA,VCE=-10V,f=100MHz
300
300
150
35
15
475
450
230
70
30
150
180
21
MHz
30
pF
Output capacitance
Cobo
VCB=-10V,f=1MHz
Turn-on time
t(on)
VCC=-10V, IC=-1A
40
ns
Turn-off time
t(off)
IB1=-IB2=-20mA
670
ns
* Pulse test: tp
300 ìs; d
Marking
Marking
2
Testconditons
718
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0.02.