IC IC SMD Type MOS Field Effect Transistor KPA1871 TSSOP-8 Features Unit: mm Can be driven by a 2.5-V power source Low on-state resistance RDS(on)1 = 26 m TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 27 m TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 38 m TYP. (VGS = 2.5 V, ID = 3.0 A) Built-in G-S protection diode against ESD 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit 30 V Drain to Source Voltage (VGS = 0) VDSS Gate to Source Voltage (VDS = 0) VGSS 12 V Drain Current (DC) ID(DC) 6 A ID(pulse) Drain Current (Pulse) *1 80 Total Power Dissipation *2 PT 2.0 Channel Temperature Tch 150 Tstg -55 to + 150 Storage Temperature *1 PW 10 s, Duty cycle A W 1% *2 Mounted on ceramic substrate of 50 cm2 X1.1 mm www.kexin.com.cn 1 IC IC SMD Type KPA1871 Electrical Characteristics Ta = 25 Parameter Testconditons IDSS VDS = 30 V, VGS = 0 Gate Leakage Current IGSS VGS = Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Max Unit 10 12 V, VDS = 0 A 10 VDS = 10 V, ID = 1 mA 0.5 5 RDS(on)1 VDS = 4.5V, ID = 3.0 A 15.0 RDS(on)2 VGS = 4.0V, ID = 3.0 A 16.0 21.5 27.0 m RDS(on)3 VGS = 2.5 V, ID = 3.0 A 21.0 27.8 38.0 m Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) tr td(off) VDS = 10 V, VGS = 0, f = 1 MHz ID = 3.0 A, VGS(on) = 4.0 V, VDD =10 V,RG = 10 tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD ID = 6.0A, VDD = 24V, VGS = 4.0 V 1.0 1.5 A VDS = 10 V, ID = 3.0A Output Capacitance Fall Time Typ | yfs | Ciss Rise Time Min VGS(off) Input Capacitance Turn-off Delay Time V S 20.5 26.0 m 930 pF 220 pF 105 pF 55 ns 180 ns 260 ns 230 ns 9 nC 2 nC 4 nC IF = 6.0 A, VGS = 0 0.80 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 180 ns Reverse Recovery Charge Qrr di/dt = 50 A/ 120 nC Body Diode forward Voltage 2 Symbol Zero Gate Voltage Drain Current www.kexin.com.cn VF(S-D) s