APT40GL120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT4 Power module K C G E K E G C ISOTOP® VCES = 1200V IC = 40A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Low conduction losses • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Max ratings 1200 65 40 70 ±20 220 Reverse Bias Safe Operating Area Tj = 150°C 70A @ 1100V RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT40GL120JU2 – Rev 0 July, 2009 Symbol VCES APT40GL120JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 150°C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=35A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 35A RG = 12Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 35A RG = 12Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 35A TJ = 25°C RG = 12Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 1950 155 115 pF 0.27 µC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Chopper diode ratings and characteristics VRRM IRM Test Conditions Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1200 Maximum Peak Repetitive Reverse Voltage VR=1200V IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs V Tj = 25°C Tj = 150°C Tc = 80°C 100 500 Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 Tj = 125°C Tj = 25°C Tj = 125°C 380 360 1700 www.microsemi.com Unit µA A 3.1 V ns nC 2-5 APT40GL120JU2 – Rev 0 July, 2009 Symbol Characteristic APT40GL120JU2 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.68 1.2 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 APT40GL120JU2 – Rev 0 July, 2009 ISOTOP® is a registered trademark of ST Microelectronics NV APT40GL120JU2 Typical Performance Curve Output Characteristics (VGE=15V) 70 Output Characteristics 70 60 TJ=25°C VGE=19V 50 TJ=150°C 40 IC (A) IC (A) 50 30 40 VGE=15V 30 20 20 10 10 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 Eon Eoff 2 10 0 0 5 6 7 8 9 10 11 12 0 13 10 20 30 40 50 60 70 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 10 80 70 VCE = 600V VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 Ω TJ = 150°C 10 50 1 Energy losses vs Collector Current 12 TJ=25°C 60 IC (A) TJ = 150°C 60 Eoff 4 50 40 30 VGE=15V TJ=150°C RG=12 Ω 20 2 10 0 0 0 10 20 30 40 Gate Resistance (ohms) 50 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 IGBT 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APT40GL120JU2 – Rev 0 July, 2009 Thermal Impedance (°C/W) 0.7 APT40GL120JU2 Forward Characteristic of diode VCE=600V D=50% RG=12 Ω TJ=150°C Tc=75°C ZVS 120 80 70 60 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 160 80 TJ=125°C 50 40 30 40 ZCS Hard switching 10 0 0 0 10 TJ=25°C 20 20 30 40 50 60 0.0 70 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) IC (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 1 0.8 Diode 0.9 0.7 0.5 0.6 0.4 0.2 0 0.00001 0.3 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APT40GL120JU2 – Rev 0 July, 2009 rectangular Pulse Duration (Seconds)