MICROSEMI APT50GT120JU2

APT50GT120JU2
ISOTOP® Boost chopper
Trench + Field Stop IGBT®
K
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
C
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
G
E
K
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP
Absolute maximum ratings
Symbol
VCES
IC1
IC2
ICM
VGE
PD
IFA V
IFRMS
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
TC = 80°C
Max ratings
1200
75
50
100
±20
347
27
34
Unit
V
A
V
W
June, 2006
C
G
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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1-7
APT50GT120JU2 – Rev 1
E
VCES = 1200V
IC = 50A @ Tc = 80°C
APT50GT120JU2
All ratings @ Tj = 25°C unless otherwise specified
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE, IC = 2mA
VGE = ±20V, VCE = 0V
Min
Typ
1.4
1.7
2.0
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Resistive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
R G = 18Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 50A
R G = 18Ω
5.0
Typ
3600
188
163
85
30
420
65
90
45
520
90
6.6
5.8
Max
5
2.1
Unit
mA
6.5
500
V
nA
Max
Unit
V
pF
ns
ns
mJ
June, 2006
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
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2-7
APT50GT120JU2 – Rev 1
Electrical Characteristics
APT50GT120JU2
Chopper diode ratings and characteristics
Symbol
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 1200V
VR = 1200V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
31
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
370
500
5
12
660
3450
220
4650
37
Reverse Recovery Time
IRRM
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IRRM
IF = 30A
VR = 800V
di/dt =1000A/µs
Min
250
500
Tj = 125°C
Characteristic
Min
Typ
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Max
2.5
32
Thermal and package characteristics
Symbol
Typ
2.0
2.3
1.8
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
Unit
V
µA
pF
ns
A
nC
ns
nC
A
Max
0.36
1.1
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
Operating Frequency vs Collector Current
60
V CE =600V
D=50%
RG=18 Ω
TJ =125°C
50
40
June, 2006
30
20
10
0
0
10
20
30
40
50
60
70
80
IC (A)
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3-7
APT50GT120JU2 – Rev 1
Fmax, Operating Frequency (kHz)
Typical IGBT Performance Curve
APT50GT120JU2
Output Characteristics (VGE=15V)
100
TJ=125°C
VGE =17V
75
IC (A)
IC (A)
TJ = 125°C
TJ=25°C
75
Output Characteristics
100
50
25
VGE=15V
50
VGE =9V
25
0
0
0
1
2
3
4
0
1
V CE (V)
3
4
20
V CE = 600V
VGE = 15V
RG = 18 Ω
TJ = 125°C
TJ=25°C
16
75
TJ=125°C
E (mJ)
IC (A)
2
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
100
50
25
12
Eon
8
Eoff
4
0
0
5
6
7
8
9
V GE (V)
10
11
0
12
25
50
75
100
IC (A)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
12
120
Eon
V CE = 600V
V GE =15V
IC = 50A
TJ = 125°C
8
100
80
Eoff
IC (A)
10
E (mJ)
VGE =13V
6
60
4
40
2
20
0
VGE=15V
TJ=125°C
RG=18 Ω
0
5
10
15
20
25
Gate Resistance (ohms)
30
0
400
800
VCE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.3
0.25
0.2
0.15
IGBT
0.9
0.7
0.5
June, 2006
0.35
0.3
0.1
0.05
0
0.00001
0.1
Single Pulse
0.05
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
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1
10
4-7
APT50GT120JU2 – Rev 1
Thermal Impedance (°C/W)
0.4
APT50GT120JU2
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5-7
APT50GT120JU2 – Rev 1
June, 2006
Typical Diode Performance Curve
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6-7
APT50GT120JU2 – Rev 1
June, 2006
APT50GT120JU2
APT50GT120JU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7
APT50GT120JU2 – Rev 1
June, 2006
Dimensions in Millimeters and (Inches)