ECO-PACTM 2 Power MOSFET in ECO-PAC 2 PSMG 150/01* Single MOSFET Die X18 I K10/11 A1 L N 8/9 Preliminary Data Sheet K13 MOSFET VDSS ID25 RDS(on) trr *NTC optional K15 Symbol Test Conditions V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM IAR TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C 1) TC = 25°C 165 76 720 180 A A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 400 W Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 100 VGS(th) VDS = VGS, ID = 8 mA 2.0 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS; TJ = 25°C VGS = 0 V; TJ = 125°C RDS(on) VGS = 10 V, ID = 90 A 1) gfs VDS = 10 V; ID = 90 A Maximum Ratings Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2) 60 V 4.0 V ±100 nA 100 2 µA mA 8 mΩ 90 S 9400 3200 1660 pF pF pF Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 • VDSS, ID = 90 A RG = 1 Ω (External) 50 90 140 65 ns ns ns ns Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 • VDSS, ID = 90 A 400 65 220 nC nC nC RthJC RthCK = 100 V = 165 A Ω = 8 mΩ < 250 ns 0.30 with heatsink compound (0.42 K/m.K; 50 µm) 0.2 K/W K/W Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 3000V electrical isolation • Low drain to tab capacitance(< 25pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier • UL certified, E 148688 Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSMG 150/01 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive; pulse width limited by TJM 720 A VSD IF = 100A, VGS = 0 V, 1) 1.5 V 250 ns t rr QRM IF = 50A,-di/dt = 100 A/µs, VR = 100 V IRM Note: 1) 2) 1.1 µC 13 A Package style and outline Dimensions in mm (1mm = 0.0394“) Pulse width limited by TJM Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ Tstg Maximum Ratings -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md Mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSMG 150/01 200 200 VGS=10V 9V 8V TJ=25OC ID - Amperes 6V 100 5V 100 5V 0 0 0.0 0.5 1.0 1.5 2.0 0 1 2 Figure 1. Output Characteristics at 25 C 4 5 Figure 2. Output Characteristics at 125OC O 1.8 2.0 VGS = 10V O TJ = 125 C 1.6 RDS(ON) - Normalized RDS(ON) - Normalized 3 VDS - Volts VDS - Volts 1.4 1.2 TJ = 25OC 1.0 0 50 100 150 1.8 ID=180A 1.6 VGS=10V VGS=15V 1.4 1.2 ID=90A VGS=10V VGS=15V 1.0 0.8 25 200 ID - Amperes 75 100 125 150 Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 100 100 80 ID - Amperes 75 Lead Current Limit 50 25 0 50 TJ - Degrees C Figure 3. RDS(on) normalized to 15A/25OC vs. ID ID - Amperes 6V 50 50 0.8 7V 150 150 ID - Amperes TJ=125OC VGS=10V 9V 8V 7V 60 40 TJ = 125oC TJ = 25oC 20 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature 0 2 4 6 8 VGS - Volts Figure 6. Admittance Curves 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSMG 150/01 15 9 6 3 0 F = 100kHz Capacitance - pF VGS - Volts 12 Ciss 10000 VDS=50V ID=90A IG=10mA Coss Crss 0 50 1000 100 150 200 250 300 350 400 0 5 10 15 Gate Charge - nC 25 30 35 40 VDS - Volts Figure 8. Capacitance Curves Figure 7. Gate Charge 200 200 100 175 VGS= 0V 1 ms ID - Amperes 150 125 100 TJ=125OC 75 10 ms 10 DC O TC = 25 C TJ=25OC 50 25 1 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 VDS - Volts VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure 10. Forward Bias Safe Operating Area 0.40 0.20 R(th)JC - K/W ID - Amperes 20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Typical Transient Thermal Resistance 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20