ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon PSMG 100/05* in ECO-PAC 2 Single MOSFET Die X18 A1 I K10 Preliminary Data Sheet = 82 A = 500 V Ω = 50 mΩ LN9 K13 K15 *NTC optional MOSFET Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 500 V 500 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID80 TC = 25°C TC = 80°C 82 62 A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 400 W Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 5 mA 500 VGS(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS, TJ = 25°C VGS = 0 V, TJ = 125°C RDS(on) VGS = 10 V, ID = IT, 1) gfs VDS = 10 V, ID = IT, 1) Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V 4 V ±100 nA 100 2 µA mA 50 mΩ 45 S 9400 1280 460 pF pF pF VGS = 10 V, VDS = 0.5 • VDSS, ID = IT RG = 1 Ω (External), 45 60 120 45 ns ns ns ns VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 330 55 155 with heatsink compound (0.42 K/m.K; 50 µm) 0.15 0.30 Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 3000V electrical isolation • Low drain to tab capacitance(< 25pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier • UL certified, E 148688 Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density nC nC Caution: These Devices are nC sensitive to electrostatic K/W discharge. Users should observe K/W proper ESD handling precautions. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V t rr QRM IRM IF = 50A,-di/dt = 100 A/µs, VR = 100 V Note: 1) 2) 1.4 13 85 A 340 A 1.5 V 250 ns µC A Dimensions in mm (1 mm = 0.0394") Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% IT test current: IT = 25A Module Symbol Conditions TVJ Tstg Maximum Ratings -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md Mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20