SAMHOP STA6611

STA6611
SamHop Microelectronics Corp.
Nov. 22, 2006
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
(N-Channel)
PRODUCT SUMMARY
VDSS
RDS(ON) ( m Ω )
ID
Max
VDSS
ID
-30V
-6.6A
RDS(ON) ( m Ω )
Max
35 @ VGS = -10V
23 @ VGS = 10V
30V
(P-Channel)
PRODUCT SUMMARY
7.6A
30 @ VGS = 4.5V
55 @ VGS = -4.5V
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1 S 2
P DIP -8
1
4
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
S ymbol
P arameter
N-Channel P-Channel
Unit
Drain-S ource Voltage
V DS
30
-30
V
Gate-S ource Voltage
V GS
20
20
V
7.6
- 6.6
A
6
5.3
A
IDM
30
28
A
IS
1.7
-1.7
A
25 C
a
Drain C urrent-C ontinuous @ Ta
ID
70 C
-P ulsed
b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Ta= 25 C
3
PD
Ta=70 C
Operating Junction and S torage
Temperature R ange
2
W
T J , T S TG
-55 to 150
C
R JA
41.5
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T A 6611
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 24V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
1.7
3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =10V, ID =7A
17
23
m ohm
V GS =4.5V, ID =5A
23
30 m ohm
OFF CHAR ACTE R IS TICS
30
V
ON CHAR ACTE R IS TICS b
V DS = 15V, V GS = 10V
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
1.0
20
A
15
S
620
PF
190
PF
115
PF
13
ns
14.4
ns
40
ns
8.4
ns
V DS =15V, ID =7A,V GS =10V
13
nC
V DS =15V, ID =7A,V GS =4.5V
6.8
nC
1.5
nC
3.5
nC
V DS = 10V, ID =7A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =15V, V GS = 0V
f =1.0MH Z
c
V DD = 15V,
ID = 7A,
R L=2.1 ohm,
V GS = 10V,
R GEN = 6 ohm
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DS =15V, ID = 7A,
V GS =10V
2
S T A6611
P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted)
Parameter
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-1.9
-3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =-10V, ID= -6A
28
35 m ohm
V GS = -4.5V, ID= -4A
44
55 m ohm
-30
V
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V DS = -15V, V GS = -10V
-1
-20
A
9.5
S
850
PF
205
PF
105
PF
12.5
ns
17.5
ns
66
ns
27
ns
V DS =-15V,ID=-6A,V GS =-10V
15
nC
V DS =-15V,ID=-6A,V GS =-4.5V
7.5
nC
V DS =-15V, ID = - 6A,
V GS =-10V
1.7
nC
4.5
nC
V DS = -15V, ID = - 6A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V D = -15V,
R L=15 ohm,
ID = -1A,
V GE N = -10V,
R GEN =6 ohm
3
S T A6611
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
C
Min Typ Max Unit
Condition
Symbol
b
VGS = 0V, Is =1.7A
VGS = 0V, Is =-1.7A
VSD
N-Ch
P-Ch
1.2
-1.2
0.8
-0.8
5
Notes
a.Surface Mounted on FR4 Board,tІ10sec.
b.Pulse Test:Pulse WidthІ300Ӵs,Duty Cycle І 2%.
c.Guaranteed by design,not subject to production testing.
N-Channel
20
40
VGS=4.5V
VGS=10V
32
16
VGS=3.5V
ID, Drain Current (A)
ID, Drain Current(A)
VGS=4V
24
16
VGS=3V
8
-55 C
Tj=125 C
12
25 C
8
4
VGS=2.5V
0
0
0
0.5
1
1.5
2
2.5
0
3
0.7
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2.8
3.5
4.2
1.75
R DS (ON) , On-R es is tance
Normalized
R DS (on) (m Ω)
2.1
Figure 2. Transfer Characteristics
48
32
V G S =4.5V
24
16
V G S =10V
8
1
1.4
VGS, Gate-to-Source Voltage (V)
40
1
8
16
24
32
V
1.60
1.30
1.15
V G S =4.5V
I D =5A
1.00
0.85
-25
40
V G S =10V
I D =7A
1.45
0
25
50
75
100
125 150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
4
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
60
20.0
I D =7A
Is , S ource-drain current (A)
50
R DS (on) (m Ω)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T A6611
40
75 C
30
125 C
20
25 C
10
0
0
2
4
6
8
25 C
75 C
1.0
0.4
10
V G S , G ate-S ource Voltage (V )
125 C
10.0
0.6
0.8
1.0
1.2
1.4
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
S T A6611
V G S , G ate to S ource V oltage (V )
900
C, Capacitance (pF)
750
Ciss
600
450
300
Coss
150
Crss
6
5
10
15
20
25
6
4
2
0
30
2
6
4
8
10
12
14 16
VDS, Drain-to Source Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 8. C apacitance
F igure 9. G ate C harge
40
250
100
60
I D , Drain C urrent (A)
Tr
S witching T ime (ns )
V DS =15V
I D =7A
8
0
0
0
10
T D(off)
Tf
T D(on)
10
V DS =15V ,ID=7A
1
V G S =10V
1
10
R
N)
L im
it
10m
100
11
s
ms
1s
DC
V G S =10V
S ingle P ulse
T A =25 C
0.1
0.03
0.1
60 100 300 600
6 10
(O
DS
1
10
30 50
R g, G ate R es is tance ( Ω)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 10. Maximum S afe
O perating Area
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
6
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T A6611
P-Channel
20
20
VGS=10V
VGS=5V
16
VGS=4V
VGS=4.5V
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
16
12
8
VGS=3.5V
4
12
125 C
8
25 C
-55 C
4
VGS=3V
0
0
0
0.5
1
1.5
2
2.5
0
3
1.8
2.7
3.6
4.5
5.4
-V DS , Drain-to-S ource Voltage (V )
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
1.5
R DS (ON) , On-R es is tance
Normalized
90
75
R DS (on) (m Ω)
0.9
60
V G S =-4.5V
45
30
V G S =-10V
V G S =-10V
I D =-6A
1.3
1.2
V G S =-4.5V
I D =-4A
1.1
1.0
15
1
1.4
1
4
8
12
16
0
20
25
50
75
100
125
150
T j( C )
T j, J unction T emperature ( C )
-I D , Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
7
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.2
V DS =V G S
I D =-250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
1.3
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
100
I D =-6A
-Is , S ource-drain current (A)
90
R DS (on) (m Ω)
5
V th, Normalized
G ate-S ource T hres hold V oltage
S T A6611
80
60
25 C
40
75 C
125 C
20
0
0
2
4
6
8
10.0
125 C
75 C
1.0
10
-V G S , G ate- S ource Voltage (V )
25 C
0
0.25
0.5
0.75
1.0
1.25
-V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
8
S T A6611
-V G S , G ate to S ource V oltage (V )
1200
1000
C, Capacitance (pF)
Ciss
800
600
400
Coss
200
Crss
0
5
10
15
20
25
6
4
2
30
2
0
4
6
8
10
12
14
VDS, Drain-to Source Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 8. C apacitance
F igure 9. G ate C harge
16
50
100
60
-I D , Drain C urrent (A)
250
S witching T ime (ns )
V DS =-15 V
I D =-6A
8
0
0
6
10
T D(off)
Tf
Tr
T D(on)
10
V D S = -15V,I D=-1A
1
10
R
L im
it
10m
11
s
ms
1s
DC
0.1
V G S =-10V
S ingle P ulse
T A =25 C
0.03
0.1
60 100 300 600
6 10
N)
100
V G S = -10 V
1
(O
DS
1
10
30 50
-V DS , B ody Diode F orward V oltage (V )
R g, G ate R es is tance ( Ω)
F igure 10. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
9
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
STA6611
PACKAGE OUTLINE DIMENSIONS
PDIP 8
SYMBOL
A
A1
A2
b
c
b2
b3
L
e
D
D1
E
E1
eA
eB
MIN
.145
.020
.125
.015
.009
.045
.030
.125
.090
.373
.030
.300
.245
.280
.310
INCHES
NOM
.172
.130
.018
.012
.060
.039
.132
.100
.386
.045
.310
.250
.325
MAX
.200
.135
.021
.014
.070
.045
.140
.110
.400
.060
.320
.255
.365
10
MIN
3.68
0.51
3.18
0.38
0.23
1.14
0.76
3.18
2.29
9.47
0.76
7.62
6.22
7.11
7.87
MILLIMETERS
NOM
MAX
4.37
5.08
3.30
3.43
0.46
0.53
0.30
0.36
1.52
1.78
0.99
1.14
3.35
3.56
2.54
2.79
9.80
10.16
1.14
1.52
7.87
8.13
6.35
6.48
8.26
9.27