S T M8457 S amHop Microelectronics C orp. Oct.16,2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 6A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -5A R DS (ON) ( m W ) 26 @ V G S = 10V Max 42 @ V G S = -10V 33 @ V G S = 4.5V 62 @ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 40 -40 V Gate-S ource Voltage V GS 20 20 V 6 -5 5.1 -4.2 A A IDM 28 -20 A IS 1.7 -1.7 A 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed ID 70 C b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange T J , T S TG 2 1.44 W -55 to 150 C 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 S T M8457 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.8 3.0 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID = 5A 20 26 m ohm V GS =4.5V, ID=4A 27 33 m ohm On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS b Forward Transconductance V DS = 5V, V GS = 10V 1.0 20 A 15 S 750 PF 125 PF 75 PF 13 ns 11 ns 37 ns 10 ns V DS =24V, ID =5A,V GS =10V 12.5 nC V DS =24V, ID =5A,V GS =4.5V 6.4 nC 1.8 nC 3.6 nC V DS = 5V, ID = 5A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =20V, V GS = 0V f =1.0MH Z c tD(ON) V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =24V, ID = 5 A V GS =4.5V 2 S T M8457 P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -32V, V GS = 0V -1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1.0 -1.8 -3.0 V Drain-S ource On-S tate R esistance R DS (ON) V GS =-10V, ID= -4A 35 42 m ohm V GS = -4.5V, ID= -3A 54 62 m ohm On-S tate Drain Current ID(ON) gFS -40 V ON CHAR ACTE R IS TICS b Forward Transconductance V DS =-5V, V GS = -10V 16 A 10 S 960 PF 142 PF 75 PF 15 ns 13 ns 66 ns 25 ns V DS =-24V,ID=-4A,V GS =-10V 15.6 nC V DS =-24V,ID=-4A,V GS =-4.5V 7.7 nC V DS =-24V, ID = - 4A V GS =-4.5V 2.3 nC 4.3 nC V DS = -5V, ID = - 4A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =-20V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V D = -20V ID = -1A V GE N = -10V R GE N = 3.3 ohm 3 S T M8457 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A VSD N-Ch P-Ch 1.2 -1.2 0.78 -0.77 Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 30 15 V G S =4V 12 V G S =4.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 24 V G S =8V 18 V G S =10V 12 6 V G S =3V 0 9 T j=125 C 6 3 25 C 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.6 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 45 R DS (ON) , On-R es is tance Normalized 2.0 40 R DS (on) (m W) 0.8 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 35 V G S =4.5V 30 25 V G S =10V 20 1 -55 C 1 6 12 18 24 1.8 1.6 1.2 V G S =4.5V I D =4A 1.0 0 30 V G S =10V I D =5A 1.4 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 4 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.20 I D =250uA 1.15 1.10 1.00 0.97 0.96 0.95 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 120 20.0 I D =5A Is , S ource-drain current (A) 100 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M8457 80 60 125 C 40 75 C 20 25 C 0 10.0 5.0 25 C 75 C 125 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.2 0.4 0.6 0.8 1.0 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M8457 V G S , G ate to S ource V oltage (V ) 1200 1000 C , C apacitance (pF ) C is s 6 800 600 400 C os s 200 0 C rs s 0 10 V DS =24V I D =5A 8 6 4 2 0 5 10 15 20 25 30 0 2 V DS , Drain-to S ource Voltage (V ) 12 14 16 80 100 60 I D , Drain C urrent (A) S witching T ime (ns ) 10 F igure 10. G ate C harge V DS =20V ,ID=1A V G S =10 V Tr TD(off) TD(on) Tf 10 1 10 R 60 100 300 600 6 10 (O DS N) L im it 10 10 1s 1 0m ms s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 1 8 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance 600 6 4 0.1 R g, G ate R es is tance ( W) 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area Thermal Resistance 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 on 0.01 Single Pulse 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M8457 P-Channel 30 15 V G S =-6V 12 V G S =-8V I D , Drain C urrent (A) ID , Drain C urrent(A) 24 V G S =-4.5V 18 V G S =-10V 12 6 0 0 9 -55 C 6 T j=125 C 3 25 C 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 120 R DS (ON) , On-R es is tance Normalized 1.5 100 R DS (on) (m W) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 80 V G S =-4.5V 60 40 V G S =-10V 20 1 0.8 1 3 6 9 12 1.3 1.2 V G S =-4.5V I D =-3A 1.1 1.0 0 15 V G S =-10V I D =-4A 1.4 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 7 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 100 125 150 75 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 120 20.0 I D =-4A Is , S ource-drain current (A) 100 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M8457 80 125 C 60 40 75 C 25 C 20 0 10.0 5.0 25 C 75 C 125 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.2 0.4 0.6 0.8 1.0 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T M8457 V G S , G ate to S ource V oltage (V ) 1500 C , C apacitance (pF ) 1250 6 C is s 1000 750 500 C os s 250 C rs s 0 0 10 V DS =-24V I D =-4A 8 6 4 2 0 5 10 15 20 25 30 0 2 V DS , Drain-to S ource Voltage (V ) TD(off) I D , Drain C urrent (A) S witching T ime (ns ) 12 14 16 80 100 60 Tr TD(on) Tf 10 1 10 R 60 100 300 600 (O DS N) L im it 10 10 0.1 0m ms s 1s 1 0.03 6 10 10 F igure 10. G ate C harge V DS = -20V,ID= -1A V G S = -10 V 1 8 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance 600 6 4 DC V G S =-10V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( W) 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 on 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 9 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M8457 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 10 INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M8457 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 11 ψ12.75 + 0.15 2.0 ±0.15