SavantIC Semiconductor Product Specification 2SB689 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For low frequency power amplifier, TV vertical deflection ouptut applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -4 V IC Collector current -4 A ICM Collector current-peak -5 A PC Collector power dissipation TC=25 40 W Ta=25 1.8 Tj Junction temperature 150 Tstg Storage temperature -45~150 SavantIC Semiconductor Product Specification 2SB689 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; RBE=< V(BR)EBO Emitter-base breakdown votage IE=-1mA; IC=0 Collector-emitter saturation voltage IC=-1A;IB=-0.1 A -1.0 V ICEO Collector cut-off current VCE=-80V; RBE=< -100 µA IEBO Emitter cut-off current VEB=-3.5V; IC=0 -50 µA hFE-1 DC current gain IC=-0.5A ; VCE=-4V 50 250 hFE-2 DC current gain IC=-50mA ; VCE=-4V 25 350 VCEsat CONDITIONS 2 MIN TYP. MAX UNIT -100 V -4 V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB689