SAVANTIC 2SB993

SavantIC Semiconductor
Product Specification
2SB993
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-7
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB993
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,RBE=8
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-70
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-7
V
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-0.4
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
µA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70
hFE-2
DC current gain
IC=-4A ; VCE=-1V
30
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
240
10
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SB993