SAVANTIC 2SD1159

SavantIC Semiconductor
Product Specification
2SD1159
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
APPLICATIONS
·TV horizontal deflection output,
·High-current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
4.5
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1159
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=:
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A, IB=0.4A
VBEsat
Base-emitter saturation voltage
ICBO
UNIT
1.0
V
IC=4A, IB=0.4A
1.5
V
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
30
hFE-2
DC current gain
IC=4A ; VCE=5V
25
Transition frequency
IC=1A ; VCE=5V
10
IC=5A;IB1=-IB2=0.5A;
VCC=50V
0.2
fT
0.5
MAX
160
MHz
Switching times
tf
Fall time
2
0.5
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD1159
SavantIC Semiconductor
Product Specification
2SD1159
Silicon NPN Power Transistors
4