SavantIC Semiconductor Product Specification 2SC2438 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A IB Base current 2 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification 2SC2438 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=100µA ; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=100µA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 1.2 V ICBO Collector cut-off current VCB=150V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=4 A ; VCE=1V 0.5 µs 2.5 µs 0.3 µs 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=4A; IB1=0.4A IB2=-0.4A;RL=5@ 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2438 SavantIC Semiconductor Product Specification 2SC2438 Silicon NPN Power Transistors 4