SavantIC Semiconductor Product Specification 2SC4273 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package · High voltage,high speed · Low saturation voltage · High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 5 A IB Base current 2 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT /W SavantIC Semiconductor Product Specification 2SC4273 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specifie SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)CEO Collector-emitter breakdown voltage IC=0.2A ; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.2 V ICBO Collector cut-off current VCB=450V ;IE=0 100 µA IEBO Emitter cut-off current VEB=10V; IC=0 100 µA hFE DC current gain IC=0.5A ; VCE=5V 25 55 Switching times ton Turn-on time tstg Storage time tf VCC=200V; IC=2.5A IB1=0.25A;IB2=-0.5A; RL=60? Fall time 2 1.0 µs 2.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC4273 SavantIC Semiconductor Product Specification 2SC4273 Silicon NPN Power Transistors 4